Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W ONSEMI
Product Code: NTHL020N090SC1
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W ONSEMI
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Useful information
Supplier parameters
Product code
NTHL020N090SC1
Brand
ON SEMICONDUCTOR
Supplier's product code
NTHL020N090SC1
Product ID
U-1922464
Case
TO247-3
Drain current
83A
Drain-source voltage
900V
Gate charge
196nC
Gate-source voltage
-10...19V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
28mΩ
Polarisation
unipolar
Power dissipation
251W
Pulsed drain current
427A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
