Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W ONSEMI
Product Code: NTHL060N090SC1
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W ONSEMI
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Useful information
Supplier parameters
Product code
NTHL060N090SC1
Brand
ON SEMICONDUCTOR
Supplier's product code
NTHL060N090SC1
Product ID
U-1922467
Case
TO247-3
Drain current
32A
Drain-source voltage
900V
Gate charge
87nC
Gate-source voltage
-10...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
60mΩ
Polarisation
unipolar
Power dissipation
110W
Pulsed drain current
184A
Technology
SiC
Type of transistor
N-MOSFET
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