Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W LUGUANG ELECTRONIC
Product Code: LGE3M35065Q
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Useful information
Supplier parameters
Product code
LGE3M35065Q
Supplier's product code
LGE3M35065Q
Product ID
U-3873581
Case
TO247-4
Drain current
40A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
30nC
Gate-source voltage
-5...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
55mΩ
Polarisation
unipolar
Power dissipation
370W
Pulsed drain current
130A
Technology
SiC
Type of transistor
N-MOSFET
Brand
LUGUANG ELECTRONIC
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