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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Useful information
Supplier parameters
Product code
LGE3M60065Q
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M60065Q
Product ID
U-3846317
Case
TO247-4
Drain current
36A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
78nC
Gate-source voltage
-4...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
75mΩ
Polarisation
unipolar
Power dissipation
208W
Pulsed drain current
97A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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