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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Useful information
Supplier parameters
Product code
LGE3M1K170B
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M1K170B
Product ID
U-3849416
Case
TO247-3
Drain current
3.5A
Drain-source voltage
1.7kV
Gate charge
21.8nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
1.5Ω
Polarisation
unipolar
Power dissipation
69W
Pulsed drain current
6A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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