Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W GeneSiC SEMICONDUCTOR
Product Code: G3R20MT17K
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2246887
Product code
G3R20MT17K
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Useful information
Supplier parameters
Product code
G3R20MT17K
Supplier's product code
G3R20MT17K
Product ID
U-2246887
#Promotion
aac_202202
Case
TO247-4
Drain current
88A
Drain-source voltage
1.7kV
Features of semiconductor devices
Kelvin terminal
Gate charge
400nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
THT
On-state resistance
20mΩ
Polarisation
unipolar
Power dissipation
809W
Pulsed drain current
300A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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