Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 GeneSiC SEMICONDUCTOR
Product Code: G2R1000MT17J
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2992091
Product code
G2R1000MT17J
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Useful information
Supplier parameters
Product code
G2R1000MT17J
#Promotion
aac_202202
Case
TO263-7
Drain current
4A
Drain-source voltage
1.7kV
Features of semiconductor devices
Kelvin terminal
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
1Ω
Polarisation
unipolar
Power dissipation
54W
Pulsed drain current
8A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Supplier's product code
G2R1000MT17J
Product ID
U-2992091
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