Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W LUGUANG ELECTRONIC
Product Code: LGE3M45170Q
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Useful information
Supplier parameters
Product code
LGE3M45170Q
Supplier's product code
LGE3M45170Q
Product ID
U-3878543
Case
TO247-4
Drain current
48A
Drain-source voltage
1.7kV
Features of semiconductor devices
Kelvin terminal
Gate charge
54nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
90mΩ
Polarisation
unipolar
Power dissipation
520W
Pulsed drain current
160A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
LUGUANG ELECTRONIC
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