Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W GeneSiC SEMICONDUCTOR
Product Code: G3R160MT17J
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2721684
Product code
G3R160MT17J
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Useful information
Supplier parameters
Product code
G3R160MT17J
Supplier's product code
G3R160MT17J
Product ID
U-2721684
#Promotion
aac_202202
Case
TO263-7
Drain current
15A
Drain-source voltage
1.7kV
Features of semiconductor devices
Kelvin terminal
Gate charge
51nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
0.16Ω
Polarisation
unipolar
Power dissipation
187W
Pulsed drain current
48A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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