Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W INFINEON TECHNOLOGIES
Product Code: IMW120R220M1HXKSA1
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Useful information
Supplier parameters
Product code
IMW120R220M1HXKSA1
#Promotion
aac_202202
Case
TO247
Drain current
9.5A
Drain-source voltage
1.2kV
Gate-source voltage
-7...23V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
416mΩ
Polarisation
unipolar
Power dissipation
37.5W
Pulsed drain current
21A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
INFINEON
Supplier's product code
IMW120R220M1HXKSA1
Product ID
U-1876347
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
