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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W MICROCHIP TECHNOLOGY

Product Code: MSC017SMA120B4
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Product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W MICROCHIP TECHNOLOGY

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Specifications

SKU
U-2975514
Product code
MSC017SMA120B4

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W

Useful information

Supplier parameters

Product code
MSC017SMA120B4
Case
TO247-4
Drain current
80A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
249nC
Kind of channel
enhanced
Manufacturer
MICROCHIP TECHNOLOGY
Mounting
THT
On-state resistance
22mΩ
Polarisation
unipolar
Power dissipation
455W
Pulsed drain current
280A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
MICROCHIP
Supplier's product code
MSC017SMA120B4
Product ID
U-2975514
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .