Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W GeneSiC SEMICONDUCTOR
Product Code: G3R30MT12J
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2721685
Product code
G3R30MT12J
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Useful information
Supplier parameters
Product code
G3R30MT12J
Supplier's product code
G3R30MT12J
Product ID
U-2721685
#Promotion
aac_202202
Case
TO263-7
Drain current
68A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
155nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
459W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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