Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W
Product Code: BXW60M1K2J
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W
Useful information
Specifications
SKU
U-2590573
Product code
BXW60M1K2J
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W
Useful information
Supplier parameters
Product code
BXW60M1K2J
Case
TO247-4
Drain current
60A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
170nC
Gate-source voltage
-3...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BRIDGELUX
Mounting
THT
On-state resistance
80mΩ
Polarisation
unipolar
Power dissipation
271.7W
Pulsed drain current
240A
Technology
SiC
Type of transistor
N-MOSFET
Supplier's product code
BXW60M1K2J
Product ID
U-2590573
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