Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W LUGUANG ELECTRONIC
Product Code: LGE3M25120Q
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Useful information
Supplier parameters
Product code
LGE3M25120Q
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M25120Q
Product ID
U-3869669
Case
TO247-4
Drain current
60A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
54nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
43mΩ
Polarisation
unipolar
Power dissipation
370W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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