Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W BASiC SEMICONDUCTOR
Product Code: B2M035120YP
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Useful information
Supplier parameters
Product code
B2M035120YP
Brand
BASiC SEMICONDUCTOR
Supplier's product code
B2M035120YP
Product ID
U-3054955
Case
TO247PLUS-4
Drain current
60A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
115nC
Gate-source voltage
-4...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
On-state resistance
35mΩ
Polarisation
unipolar
Power dissipation
375W
Pulsed drain current
190A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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