Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W LUGUANG ELECTRONIC
Product Code: LGE3M50120B
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W
Useful information
Supplier parameters
Product code
LGE3M50120B
Case
TO247-3
Drain current
43A
Drain-source voltage
1.2kV
Gate charge
0.12µC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
80mΩ
Polarisation
unipolar
Power dissipation
327W
Pulsed drain current
145A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M50120B
Product ID
U-3873583
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