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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Useful information
Supplier parameters
Product code
LGE3M40120Q
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M40120Q
Product ID
U-3846314
Case
TO247-4
Drain current
39A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
145nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
69mΩ
Polarisation
unipolar
Power dissipation
300W
Pulsed drain current
117A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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