Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 70A; 300W LUGUANG ELECTRONIC
Product Code: LGE3M80120Q
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 70A; 300W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 70A; 300W
Useful information
Supplier parameters
Product code
LGE3M80120Q
Case
TO247-4
Drain current
31A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
76nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
0.13Ω
Polarisation
unipolar
Power dissipation
300W
Pulsed drain current
70A
Technology
SiC
Type of transistor
N-MOSFET
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M80120Q
Product ID
U-3846318
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