Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W LUGUANG ELECTRONIC
Product Code: LGE3M80120B
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W
Useful information
Supplier parameters
Supplier's product code
LGE3M80120B
Product ID
U-3869673
Case
TO247-3
Drain current
28A
Drain-source voltage
1.2kV
Gate charge
76nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
0.129Ω
Polarisation
unipolar
Power dissipation
208W
Pulsed drain current
80A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Product code
LGE3M80120B
Brand
LUGUANG ELECTRONIC
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