Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W LUGUANG ELECTRONIC
Product Code: LGE3M70120Q
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W
Useful information
Supplier parameters
Product code
LGE3M70120Q
Case
TO247-4
Drain current
27A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
69nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
0.122Ω
Polarisation
unipolar
Power dissipation
200W
Pulsed drain current
85A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M70120Q
Product ID
U-3873584
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