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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W MICROCHIP (MICROSEMI)

Product Code: MSC080SMA120B4
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Price range

AmountPrice with tax (pcs)
1-2
€29.64
3-9
€26.68
10+
€23.57
wholesale

Min. qty: 1

Multiplier: 1

Total:

€29.64
2024-10-04 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W MICROCHIP (MICROSEMI)

Useful information

Specifications

SKU
U-1906009
Brand
Product code
MSC080SMA120B4

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W

Useful information

Supplier parameters

Product code
MSC080SMA120B4
Product ID
U-1906009
Case
TO247-4
Drain current
26A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
64nC
Kind of channel
enhanced
Manufacturer
MICROCHIP (MICROSEMI)
Mounting
THT
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
200W
Pulsed drain current
90A
Technology
SiC
Type of transistor
N-MOSFET
Brand
MICROCHIP
Supplier's product code
MSC080SMA120B4
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
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