Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7 LUGUANG ELECTRONIC
Product Code: LGE3M80120J
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Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7 LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7
Useful information
Supplier parameters
Product code
LGE3M80120J
Case
D2PAK-7
Drain current
23A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
20.8nC
Gate-source voltage
-3...15V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
LUGUANG ELECTRONIC
Mounting
SMD
On-state resistance
96mΩ
Polarisation
unipolar
Power dissipation
136W
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M80120J
Product ID
U-3873585
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