Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W VISHAY
Product Code: MXP120A080FW-GE3
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Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Useful information
Supplier parameters
Product code
MXP120A080FW-GE3
Product ID
U-4158654
Case
TO247-3
Drain current
18A
Drain-source voltage
1.2kV
Gate charge
47.3nC
Gate-source voltage
-5...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
0.175Ω
Polarisation
unipolar
Power dissipation
56W
Pulsed drain current
58A
Technology
SiC
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
MXP120A080FW-GE3
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