Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247 INFINEON TECHNOLOGIES
Product Code: IMW120R090M1HXKSA1
Warehouse in Europe
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Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247
Useful information
Supplier parameters
Product code
IMW120R090M1HXKSA1
Brand
INFINEON
Supplier's product code
IMW120R090M1HXKSA1
Product ID
U-1876345
#Promotion
aac_202202
Case
TO247
Drain current
18A
Drain-source voltage
1.2kV
Gate-source voltage
-7...23V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
0.17Ω
Polarisation
unipolar
Power dissipation
58W
Pulsed drain current
50A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
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