Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 108A; Idm: 340A; 625W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 108A; Idm: 340A; 625W
Useful information
Supplier parameters
Product code
LGE3M14120Q
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M14120Q
Product ID
U-3846308
Case
TO247-4
Drain current
108A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
230nC
Gate-source voltage
-4...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
18mΩ
Polarisation
unipolar
Power dissipation
625W
Pulsed drain current
340A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .