Transistor: N-MOSFET; Polarâ„¢; unipolar; 1kV; 1.4A; Idm: 3A; 63W IXYS
Product Code: IXTP1R4N100P
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; Polarâ„¢; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Useful information
Supplier parameters
Product code
IXTP1R4N100P
Brand
IXYS
Supplier's product code
IXTP1R4N100P
Product ID
U-221679
#Promotion
aac_202202
Case
TO220AB
Drain current
1.4A
Drain-source voltage
1kV
Features of semiconductor devices
standard power mosfet
Gate charge
17.8nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
IXYS
Mounting
THT
On-state resistance
11.8Ω
Polarisation
unipolar
Power dissipation
63W
Pulsed drain current
3A
Reverse recovery time
750ns
Technology
Polarâ„¢
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
