Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A SHINDENGEN
Product Code: P0R5B60HP2-5071
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Product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A SHINDENGEN
Useful information
Specifications
SKU
U-1937078
Product code
P0R5B60HP2-5071
Supplier product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Useful information
Supplier parameters
Product code
P0R5B60HP2-5071
Supplier's product code
P0R5B60HP2-5071
Product ID
U-1937078
Case
FB (TO252AA)
Drain current
0.5A
Drain-source voltage
600V
Gate charge
4.3nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
SHINDENGEN
Mounting
SMD
On-state resistance
10Ω
Polarisation
unipolar
Power dissipation
35W
Pulsed drain current
2A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
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