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Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W IXYS

Product Code: MMIX1F420N10T
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Product description

Brand
Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W IXYS

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Specifications

SKU
U-261736
Brand
Product code
MMIX1F420N10T

Supplier product description

Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W

Useful information

Supplier parameters

Product code
MMIX1F420N10T
Brand
IXYS
Supplier's product code
MMIX1F420N10T
Product ID
U-261736
#Promotion
aac_202202
Case
SMPD
Drain current
334A
Drain-source voltage
100V
Gate charge
670nC
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
IXYS
Mounting
SMD
On-state resistance
2.6mΩ
Polarisation
unipolar
Power dissipation
680W
Pulsed drain current
1kA
Reverse recovery time
140ns
Technology
HiPerFET™
Type of transistor
N-MOSFET
Unit price
No
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