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Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8 DIODES INCORPORATED

Product Code: DMN4800LSS-13
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Product description

Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8 DIODES INCORPORATED

Specifications

SKU
U-2876199
Product code
DMN4800LSS-13

Supplier product description

Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8

Supplier parameters

Product code
DMN4800LSS-13
Brand
DIODES INCORPORATED
Supplier's product code
DMN4800LSS-13
Product ID
U-2876199
Case
SO8
Drain current
9A
Drain-source voltage
30V
Gate charge
8.7nC
Gate-source voltage
±25V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
20mΩ
Polarisation
unipolar
Power dissipation
1W
Pulsed drain current
50A
Type of transistor
N-MOSFET
Unit price
No
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