Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Qorvo (UnitedSiC)
Product Code: UF3C065080K4S
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Product description
Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Qorvo (UnitedSiC)
Useful information
Specifications
SKU
U-367988
Product code
UF3C065080K4S
Supplier product description
Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Useful information
Supplier parameters
Case
TO247-4
Drain current
23A
Drain-source voltage
650V
Features of semiconductor devices
ESD protected gate
Gate charge
43nC
Gate-source voltage
±25V
Kind of transistor
cascode
Manufacturer
Qorvo (UnitedSiC)
Mounting
THT
On-state resistance
80mΩ
Polarisation
unipolar
Power dissipation
190W
Pulsed drain current
65A
Technology
SiC
Type of transistor
N-JFET/N-MOSFET
Supplier's product code
UF3C065080K4S
Product ID
U-367988
Product code
UF3C065080K4S
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