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Product description
Brand
Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB YANGJIE TECHNOLOGY
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Supplier parameters
Product code
YJ4N65CZ-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJ4N65CZ-YAN
Product ID
U-1928807
#Promotion
aac_202202
Case
TO220AB
Drain current
4A
Drain-source voltage
650V
Gate charge
20nC
Gate-source voltage
±20V
Heatsink thickness
max. 1.33mm
Kind of channel
enhanced
Kind of package
tube
Manufacturer
YANGJIE TECHNOLOGY
Mounting
THT
On-state resistance
2.6Ω
Polarisation
unipolar
Power dissipation
100W
Pulsed drain current
16A
Type of transistor
N-MOSFET
Unit price
No
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