Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB YANGJIE TECHNOLOGY
Product Code: YJ10N60CZ-YAN
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Product description
Brand
Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB YANGJIE TECHNOLOGY
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Supplier parameters
Product code
YJ10N60CZ-YAN
Supplier's product code
YJ10N60CZ-YAN
Product ID
U-1928791
Case
TO220AB
Drain current
10A
Drain-source voltage
600V
Gate charge
65nC
Gate-source voltage
±20V
Heatsink thickness
max. 1.33mm
Kind of channel
enhanced
Kind of package
tube
Manufacturer
YANGJIE TECHNOLOGY
Mounting
THT
On-state resistance
0.8Ω
Polarisation
unipolar
Power dissipation
178W
Pulsed drain current
40A
Type of transistor
N-MOSFET
Brand
YANGJIE TECHNOLOGY
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