Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN ONSEMI
Product Code: FQA13N80-F109
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Supplier parameters
Product code
FQA13N80-F109
Supplier's product code
FQA13N80-F109
Product ID
U-2349494
#Promotion
aac_202202
Case
TO3PN
Drain current
8A
Drain-source voltage
800V
Gate charge
88nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
0.75Ω
Polarisation
unipolar
Power dissipation
300W
Pulsed drain current
50.4A
Type of transistor
N-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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