Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3 ONSEMI
Product Code: FDP2D3N10C
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3 ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3
Supplier parameters
Product code
FDP2D3N10C
Brand
ON SEMICONDUCTOR
Supplier's product code
FDP2D3N10C
Product ID
U-2412921
Case
TO220-3
Drain current
157A
Drain-source voltage
100V
Gate charge
152nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
2.3mΩ
Polarisation
unipolar
Power dissipation
214W
Pulsed drain current
888A
Technology
PowerTrench®
Type of transistor
N-MOSFET
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