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Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN ONSEMI

Product Code: FDA28N50
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Product description

Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN ONSEMI

Specifications

SKU
U-2412859
Product code
FDA28N50

Supplier product description

Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN

Supplier parameters

Product code
FDA28N50
Supplier's product code
FDA28N50
Product ID
U-2412859
#Promotion
aac_202202
Case
TO3PN
Drain current
17A
Drain-source voltage
500V
Gate charge
105nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
155mΩ
Polarisation
unipolar
Power dissipation
310W
Pulsed drain current
112A
Technology
DMOS
Type of transistor
N-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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