Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A YANGJIE TECHNOLOGY
Product Code: YJQ15GP10A-YAN
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Product description
Brand
Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A YANGJIE TECHNOLOGY
Useful information
Specifications
Supplier product description
Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Useful information
Supplier parameters
Product code
YJQ15GP10A-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJQ15GP10A-YAN
Product ID
U-2217003
Case
DFN3.3x3.3 EP
Drain current
-9.5A
Drain-source voltage
-100V
Gate charge
3.98nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
0.12Ω
Polarisation
unipolar
Power dissipation
17.2W
Pulsed drain current
-45A
Technology
SPLIT GATE TRENCH
Type of transistor
P-MOSFET
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