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Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW ONSEMI

Product Code: NTS4173PT1G
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Product description

Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW ONSEMI

Specifications

SKU
U-2343909
Product code
NTS4173PT1G

Supplier product description

Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW

Supplier parameters

Product code
NTS4173PT1G
#Promotion
aac_202202
Case
SC70
Drain current
-800mA
Drain-source voltage
-30V
Gate charge
10.1nC
Gate-source voltage
±12V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
0.15Ω
Polarisation
unipolar
Power dissipation
0.29W
Pulsed drain current
-5A
Type of transistor
P-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
Supplier's product code
NTS4173PT1G
Product ID
U-2343909
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .