Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W YANGJIE TECHNOLOGY
Product Code: YJG80G06A-YAN
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Product description
Brand
Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W YANGJIE TECHNOLOGY
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Useful information
Supplier parameters
Product code
YJG80G06A-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJG80G06A-YAN
Product ID
U-222286
Case
DFN5060-8
Drain current
50A
Drain-source voltage
60V
Gate charge
67nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
5mΩ
Polarisation
unipolar
Power dissipation
38W
Pulsed drain current
320A
Technology
SPLIT GATE TRENCH
Type of transistor
N-MOSFET
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