Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK ONSEMI
Product Code: FQB8N90CTM
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Supplier parameters
Product code
FQB8N90CTM
Supplier's product code
FQB8N90CTM
Product ID
U-2349525
Case
D2PAK
Drain current
3.8A
Drain-source voltage
900V
Gate charge
45nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
1.9Ω
Polarisation
unipolar
Power dissipation
171W
Pulsed drain current
25A
Technology
QFET®
Type of transistor
N-MOSFET
Brand
ON SEMICONDUCTOR
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