Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK ONSEMI
Product Code: FDB047N10
Brand
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Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK
Supplier parameters
Brand
ON SEMICONDUCTOR
Supplier's product code
FDB047N10
Product ID
U-2329711
Product code
FDB047N10
Case
D2PAK
Drain current
164A
Drain-source voltage
100V
Gate charge
0.21µC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
4.7mΩ
Polarisation
unipolar
Power dissipation
375W
Pulsed drain current
656A
Type of transistor
N-MOSFET
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