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Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 ONSEMI

Product Code: FDB0190N807L
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Product description

Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 ONSEMI

Specifications

SKU
U-2349827
Product code
FDB0190N807L

Supplier product description

Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6

Supplier parameters

Product code
FDB0190N807L
Brand
ON SEMICONDUCTOR
Supplier's product code
FDB0190N807L
Product ID
U-2349827
Case
D2PAK-6
Drain current
190A
Drain-source voltage
80V
Gate charge
249nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
4.3mΩ
Polarisation
unipolar
Power dissipation
250W
Pulsed drain current
1.44kA
Type of transistor
N-MOSFET
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