MOSFET, N-CH, 200V, 39.6A, 125W
Product Code: SIDR610DP-T1-GE3
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Supplier product description
MOSFET, N-CH, 200V, 39.6A, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:39.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0239ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
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Supplier parameters
Product code
SIDR610DP-T1-GE3
Brand
VISHAY
Supplier's product code
3014141
Product ID
U-1900366
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