IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Product Code: NCP5111DR2G
Brand
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Product description
Brand
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Useful information
Specifications
Supplier product description
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Useful information
Supplier parameters
Product code
NCP5111DR2G
Supplier's product code
NCP5111DR2G
Product ID
U-2417831
#Promotion
aac_202202
Case
SO8
Impulse rise time
160ns
Kind of integrated circuit
high-/low-side
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
Number of channels
2
Operating temperature
-40...125°C
Output current
-500...250mA
Protection
undervoltage UVP
Pulse fall time
75ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Unit price
No
Voltage class
600V
Brand
ON SEMICONDUCTOR
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