Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1 STARPOWER SEMICONDUCTOR
Product Code: GD15PJY120F1S
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1 STARPOWER SEMICONDUCTOR
Specifications
SKU
U-2964920
Product code
GD15PJY120F1S
Supplier product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Supplier parameters
Product code
GD15PJY120F1S
Supplier's product code
GD15PJY120F1S
Product ID
U-2964920
Case
F1.1
Collector current
15A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
30A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of module
IGBT
Topology
three-phase diode bridge
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
