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Transistor:unipolar,P-MOSFET;-55V;-12A;45W;TO220AB

Product Code: IRF9Z24NPBF
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AmountPrice with tax (pcs)
1-3
€2.00€2.00
4+
€1.60
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Min. qty: 1

Unit: pcs

Total:

€2.00

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Product description

INTERNATIONAL RECTIFIER
MOS-P-Ch 55V 12A 175mOm TO220

Specifications

SKU
86729
Weight
0.001996 kg.
Current, A
12
Structure
MOS-P-Ch
Product code
IRF9Z24NPBF
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

INTERNATIONAL RECTIFIER P-MOSFET Transistor

This INTERNATIONAL RECTIFIER P-MOSFET transistor, also known as a unipolar transistor, is a high-power semiconductor device ideal for various applications requiring efficient switching and current handling.

Key Features and Specifications

  • Type: P-MOSFET (Unipolar)
  • Voltage: -55V
  • Current: -12A
  • Power: 45W
  • Package: TO220AB

Applications

This robust MOSFET is suitable for a wide range of applications, including:

  • Power switching circuits
  • Motor control systems
  • High-current applications
  • Power supplies

Why Choose This Product?

The INTERNATIONAL RECTIFIER P-MOSFET offers a compelling combination of high power handling, reliable performance, and a compact TO220AB package. Its robust design ensures long-term durability and efficiency in demanding applications. Choose this MOSFET for its proven reliability and suitability for high-current, high-power projects.

Technical Details

ParameterValue
TypeP-MOSFET
UnipolarYes
Voltage-55V
Current-12A
Power45W
PackageTO220AB

This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iÅ¡ doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].

Supplier product description

Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB

Supplier parameters

Case
TO220AB
Drain current
-12A
Drain-source voltage
-55V
Gate charge
12.7nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
0.175Ω
Polarisation
unipolar
Power dissipation
45W
Technology
HEXFET®
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .