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Transistor MOS-N-Ch 60V 84A 200W<0.012R TO-220AB

Product Code: IRF1010E
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€1.99€1.99
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€1.79
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€1.99

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Product description

INTERNATIONAL RECTIFIER
MOS-N-Ch 60V 84A 200W<0.012R TO-220AB

Specifications

SKU
78231
Weight
0.001983 kg.
Current, A
84
Structure
MOS-N-Ch
Product code
IRF1010E
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

INTERNATIONAL RECTIFIER Transistor MOS-N-Ch 60V 84A 200W <0.012R TO-220AB

INTERNATIONAL RECTIFIER Transistor MOS-N-Ch 60V 84A 200W <0.012R TO-220AB

This INTERNATIONAL RECTIFIER MOS-N-Ch 60V 84A 200W <0.012R TO-220AB transistor, also known as an N-channel MOSFET, is a high-power semiconductor device ideal for various applications requiring efficient switching and amplification.

Key Features and Specifications

  • Type: N-Channel MOSFET
  • Voltage Rating (VDSS): 60V
  • Current Rating (ID): 84A
  • Power Rating: 200W
  • On-Resistance (RDS(on)): <0.012Ω
  • Package: TO-220AB

Applications

This powerful MOSFET is suitable for a wide range of applications, including:

  • Power supplies
  • Motor control
  • Switching circuits
  • Industrial automation
  • High-power applications

Why Choose This Product?

The INTERNATIONAL RECTIFIER MOS-N-Ch 60V 84A 200W <0.012R TO-220AB offers a compelling combination of high power handling, low on-resistance, and robust construction. Its high current and voltage ratings make it suitable for demanding applications. The TO-220AB package ensures efficient heat dissipation. Choose this product for reliable performance and long-term durability in your power electronics projects.

Technical Details

ParameterValue
Transistor TypeN-MOSFET
Voltage Rating (VDSS)60V
Current Rating (ID)84A
Power Rating200W
On-Resistance (RDS(on))<0.012Ω
PackageTO-220AB

This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iÅ¡ doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].

Supplier product description

Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB

Supplier parameters

Case
TO220AB
Drain current
81A
Drain-source voltage
60V
Gate charge
86.6nC
Gate-source voltage
±20V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
12mΩ
Polarisation
unipolar
Power dissipation
170W
Technology
HEXFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .