Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A VISHAY
Product Code: SQJ409EP-T1-BE3
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Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -60A; Idm: -150A
Supplier parameters
Product code
SQJ409EP-T1-BE3
Brand
VISHAY
Supplier's product code
SQJ409EP-T1-BE3
Product ID
U-3116592
Drain current
-60A
Drain-source voltage
-40V
Gate charge
260nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
12.6mΩ
Polarisation
unipolar
Power dissipation
68W
Pulsed drain current
-150A
Technology
TrenchFET®
Type of transistor
P-MOSFET
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