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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A VISHAY

Product Code: SIS413DN-T1-GE3
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Brand

Price range

AmountPrice with tax (pcs)
1-9
€0.82€0.82
10-24
€0.72
25-99
€0.52
100-249
€0.49
250+
€0.42
wholesale

Min. qty: 1

Multiplier: 1

Total:

€0.82
2024-12-02 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A VISHAY

Specifications

SKU
U-3046148
Brand
Product code
SIS413DN-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A

Supplier parameters

Product code
SIS413DN-T1-GE3
Brand
VISHAY
Supplier's product code
SIS413DN-T1-GE3
Product ID
U-3046148
Case
PowerPAK® 1212-8
Drain current
-18A
Drain-source voltage
-30V
Gate charge
110nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
13.2mΩ
Polarisation
unipolar
Power dissipation
33W
Pulsed drain current
-70A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
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