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Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A VISHAY

Product Code: SIA4263DJ-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A VISHAY

Specifications

SKU
U-3116295
Brand
Product code
SIA4263DJ-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A

Supplier parameters

Product code
SIA4263DJ-T1-GE3
Brand
VISHAY
Supplier's product code
SIA4263DJ-T1-GE3
Product ID
U-3116295
Drain current
-12A
Drain-source voltage
-20V
Gate charge
52.2nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
51.1mΩ
Polarisation
unipolar
Power dissipation
15.6W
Pulsed drain current
-32A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
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