Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A VISHAY
Product Code: SIA413DJ-T1-GE3
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Supplier parameters
Brand
VISHAY
Supplier's product code
SIA413DJ-T1-GE3
Product ID
U-3116293
Drain current
-12A
Drain-source voltage
-12V
Gate charge
57nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
19W
Pulsed drain current
-40A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Product code
SIA413DJ-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
